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Vertical Tunnel Field-Effect Transistor with Polysilicon Layer.
Lee WJ, Kwon HT, Choi HS, Wee D, Park YJ, Kim B, Kim Y. Lee WJ, et al. Among authors: kim b, kim y. J Nanosci Nanotechnol. 2019 Oct 1;19(10):6722-6726. doi: 10.1166/jnn.2019.17111. J Nanosci Nanotechnol. 2019. PMID: 31027017
Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering.
Lee J, Ryu JH, Kim B, Hussain F, Mahata C, Sim E, Ismail M, Abbas Y, Abbas H, Lee DK, Kim MH, Kim Y, Choi C, Park BG, Kim S. Lee J, et al. Among authors: kim b, kim s, kim mh, kim y. ACS Appl Mater Interfaces. 2020 Jul 29;12(30):33908-33916. doi: 10.1021/acsami.0c07867. Epub 2020 Jul 15. ACS Appl Mater Interfaces. 2020. PMID: 32608233
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