Lv S - Search Results

1

Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory.

Cheng Y, Cai D, Zheng Y, Yan S, Wu L, Li C, Song W, Xin T, Lv S, Huang R, Lv H, Song Z, Feng S. Cheng Y, et al. Among authors: lv h, lv s. ACS Appl Mater Interfaces. 2020 May 20;12(20):23051-23059. doi: 10.1021/acsami.0c02507. Epub 2020 May 7. ACS Appl Mater Interfaces. 2020. PMID: 32340441

2

Thermal Barrier Phase Change Memory.

Shen J, Lv S, Chen X, Li T, Zhang S, Song Z, Zhu M. Shen J, et al. Among authors: lv s. ACS Appl Mater Interfaces. 2019 Feb 6;11(5):5336-5343. doi: 10.1021/acsami.8b18473. Epub 2019 Jan 24. ACS Appl Mater Interfaces. 2019. PMID: 30624043

3

Sc-Centered Octahedron Enables High-Speed Phase Change Memory with Improved Data Retention and Reduced Power Consumption.

Wang Y, Guo T, Liu G, Li T, Lv S, Song S, Cheng Y, Song W, Ren K, Song Z. Wang Y, et al. Among authors: lv s. ACS Appl Mater Interfaces. 2019 Mar 20;11(11):10848-10855. doi: 10.1021/acsami.8b22580. Epub 2019 Mar 12. ACS Appl Mater Interfaces. 2019. PMID: 30810295

4

Crystal-Like Glassy Structure in Sc-Doped BiSbTe Ensuring Excellent Speed and Power Efficiency in Phase Change Memory.

Ren K, Xia M, Zhu S, Wang G, Xin T, Lv S, Song Z. Ren K, et al. Among authors: lv s. ACS Appl Mater Interfaces. 2020 Apr 8;12(14):16601-16608. doi: 10.1021/acsami.0c00476. Epub 2020 Mar 25. ACS Appl Mater Interfaces. 2020. PMID: 32174106

5

Atomic scale insight into the effects of Aluminum doped Sb₂Te for phase change memory application.

Wang Y, Wang T, Zheng Y, Liu G, Li T, Lv S, Song W, Song S, Cheng Y, Ren K, Song Z. Wang Y, et al. Among authors: lv s. Sci Rep. 2018 Oct 11;8(1):15136. doi: 10.1038/s41598-018-33421-y. Sci Rep. 2018. PMID: 30310138 Free PMC article.

6

12-state multi-level cell storage implemented in a 128 Mb phase change memory chip.

Song Z , Cai D , Cheng Y , Wang L , Lv S , Xin T , Feng G . Song Z , et al. Among authors: lv s. Nanoscale. 2021 Jun 21;13(23):10455-10461. doi: 10.1039/d1nr00100k. Epub 2021 Apr 1. Nanoscale. 2021. PMID: 34137747

7

Correction: 12-state multi-level cell storage implemented in a 128 Mb phase change memory chip.

Song Z, Cai D, Cheng Y, Wang L, Lv S, Xin T, Feng G. Song Z, et al. Among authors: lv s. Nanoscale. 2021 Jun 17;13(23):10608-10609. doi: 10.1039/d1nr90100a. Nanoscale. 2021. PMID: 34137760

8

Ta-Doped Sb₂Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics.

Xue Y, Yan S, Lv S, Song S, Song Z. Xue Y, et al. Among authors: lv s. Nanomicro Lett. 2021 Jan 4;13(1):33. doi: 10.1007/s40820-020-00557-4. Nanomicro Lett. 2021. PMID: 34138214 Free PMC article.

9

One order of magnitude faster phase change at reduced power in Ti-Sb-Te.

Zhu M, Xia M, Rao F, Li X, Wu L, Ji X, Lv S, Song Z, Feng S, Sun H, Zhang S. Zhu M, et al. Among authors: lv s. Nat Commun. 2014 Jul 8;5:4086. doi: 10.1038/ncomms5086. Nat Commun. 2014. PMID: 25001009 Free PMC article.

10

Low-Energy Amorphization of Ti1Sb2Te5 Phase Change Alloy Induced by TiTe2 Nano-Lamellae.

Ding K, Rao F, Lv S, Cheng Y, Wu L, Song Z. Ding K, et al. Among authors: lv s. Sci Rep. 2016 Jul 29;6:30645. doi: 10.1038/srep30645. Sci Rep. 2016. PMID: 27469931 Free PMC article.

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