Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors.
Li J, Li Y, Zhou N, Xiong W, Wang G, Zhang Q, Du A, Gao J, Kong Z, Lin H, Xiang J, Li C, Yin X, Wang X, Yang H, Ma X, Han J, Zhang J, Hu T, Cao Z, Yang T, Li J, Yin H, Zhu H, Luo J, Wang W, Radamson HH.
Li J, et al. Among authors: radamson hh.
Nanomaterials (Basel). 2020 Apr 20;10(4):793. doi: 10.3390/nano10040793.
Nanomaterials (Basel). 2020.
PMID: 32326106
Free PMC article.