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Page 1
Silicon Nanowires for Gas Sensing: A Review.
Akbari-Saatlu M, Procek M, Mattsson C, Thungström G, Nilsson HE, Xiong W, Xu B, Li Y, Radamson HH. Akbari-Saatlu M, et al. Among authors: radamson hh. Nanomaterials (Basel). 2020 Nov 6;10(11):2215. doi: 10.3390/nano10112215. Nanomaterials (Basel). 2020. PMID: 33172221 Free PMC article. Review.
Miniaturization of CMOS.
Radamson HH, He X, Zhang Q, Liu J, Cui H, Xiang J, Kong Z, Xiong W, Li J, Gao J, Yang H, Gu S, Zhao X, Du Y, Yu J, Wang G. Radamson HH, et al. Micromachines (Basel). 2019 Apr 30;10(5):293. doi: 10.3390/mi10050293. Micromachines (Basel). 2019. PMID: 31052223 Free PMC article. Review.
A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm.
Li J, Li Y, Zhou N, Wang G, Zhang Q, Du A, Zhang Y, Gao J, Kong Z, Lin H, Xiang J, Li C, Yin X, Li Y, Wang X, Yang H, Ma X, Han J, Zhang J, Hu T, Yang T, Li J, Yin H, Zhu H, Wang W, Radamson HH. Li J, et al. Among authors: radamson hh. Materials (Basel). 2020 Feb 7;13(3):771. doi: 10.3390/ma13030771. Materials (Basel). 2020. PMID: 32046197 Free PMC article.
Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors.
Li J, Li Y, Zhou N, Xiong W, Wang G, Zhang Q, Du A, Gao J, Kong Z, Lin H, Xiang J, Li C, Yin X, Wang X, Yang H, Ma X, Han J, Zhang J, Hu T, Cao Z, Yang T, Li J, Yin H, Zhu H, Luo J, Wang W, Radamson HH. Li J, et al. Among authors: radamson hh. Nanomaterials (Basel). 2020 Apr 20;10(4):793. doi: 10.3390/nano10040793. Nanomaterials (Basel). 2020. PMID: 32326106 Free PMC article.
State of the Art and Future Perspectives in Advanced CMOS Technology.
Radamson HH, Zhu H, Wu Z, He X, Lin H, Liu J, Xiang J, Kong Z, Xiong W, Li J, Cui H, Gao J, Yang H, Du Y, Xu B, Li B, Zhao X, Yu J, Dong Y, Wang G. Radamson HH, et al. Nanomaterials (Basel). 2020 Aug 7;10(8):1555. doi: 10.3390/nano10081555. Nanomaterials (Basel). 2020. PMID: 32784801 Free PMC article. Review.
Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices.
Zhang Q, Gu J, Xu R, Cao L, Li J, Wu Z, Wang G, Yao J, Zhang Z, Xiang J, He X, Kong Z, Yang H, Tian J, Xu G, Mao S, Radamson HH, Yin H, Luo J. Zhang Q, et al. Among authors: radamson hh. Nanomaterials (Basel). 2021 Mar 5;11(3):646. doi: 10.3390/nano11030646. Nanomaterials (Basel). 2021. PMID: 33808024 Free PMC article.
High Performance p-i-n Photodetectors on Ge-on-Insulator Platform.
Zhao X, Wang G, Lin H, Du Y, Luo X, Kong Z, Su J, Li J, Xiong W, Miao Y, Li H, Guo G, Radamson HH. Zhao X, et al. Among authors: radamson hh. Nanomaterials (Basel). 2021 Apr 27;11(5):1125. doi: 10.3390/nano11051125. Nanomaterials (Basel). 2021. PMID: 33925305 Free PMC article.
33 results