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Boron nitride substrates for high-quality graphene electronics.
Dean CR, Young AF, Meric I, Lee C, Wang L, Sorgenfrei S, Watanabe K, Taniguchi T, Kim P, Shepard KL, Hone J. Dean CR, et al. Among authors: hone j. Nat Nanotechnol. 2010 Oct;5(10):722-6. doi: 10.1038/nnano.2010.172. Epub 2010 Aug 22. Nat Nanotechnol. 2010. PMID: 20729834
Atomically thin MoS₂: a new direct-gap semiconductor.
Mak KF, Lee C, Hone J, Shan J, Heinz TF. Mak KF, et al. Among authors: hone j. Phys Rev Lett. 2010 Sep 24;105(13):136805. doi: 10.1103/PhysRevLett.105.136805. Epub 2010 Sep 24. Phys Rev Lett. 2010. PMID: 21230799
Hofstadter's butterfly and the fractal quantum Hall effect in moiré superlattices.
Dean CR, Wang L, Maher P, Forsythe C, Ghahari F, Gao Y, Katoch J, Ishigami M, Moon P, Koshino M, Taniguchi T, Watanabe K, Shepard KL, Hone J, Kim P. Dean CR, et al. Among authors: hone j. Nature. 2013 May 30;497(7451):598-602. doi: 10.1038/nature12186. Epub 2013 May 15. Nature. 2013. PMID: 23676673
One-dimensional electrical contact to a two-dimensional material.
Wang L, Meric I, Huang PY, Gao Q, Gao Y, Tran H, Taniguchi T, Watanabe K, Campos LM, Muller DA, Guo J, Kim P, Hone J, Shepard KL, Dean CR. Wang L, et al. Among authors: hone j. Science. 2013 Nov 1;342(6158):614-7. doi: 10.1126/science.1244358. Science. 2013. PMID: 24179223
Physical adsorption and charge transfer of molecular Br2 on graphene.
Chen Z, Darancet P, Wang L, Crowther AC, Gao Y, Dean CR, Taniguchi T, Watanabe K, Hone J, Marianetti CA, Brus LE. Chen Z, et al. Among authors: hone j. ACS Nano. 2014 Mar 25;8(3):2943-50. doi: 10.1021/nn500265f. Epub 2014 Feb 17. ACS Nano. 2014. PMID: 24528378
353 results