Cheng Y - Search Results

1

The formation of TiO₂/VO₂ multilayer structure via directional cationic diffusion.

Zheng Y, Chen Z, Lu H, Cheng Y, Chen X, He Y, Zhang Z. Zheng Y, et al. Among authors: cheng y. Nanoscale. 2021 Apr 30;13(16):7783-7791. doi: 10.1039/d1nr00290b. Nanoscale. 2021. PMID: 33871530

2

Understanding the crystallization behavior of as-deposited Ti-Sb-Te alloys through real-time radial distribution functions.

Zhu M, Xia M, Song Z, Cheng Y, Wu L, Rao F, Song S, Wang M, Lu Y, Feng S. Zhu M, et al. Among authors: cheng y. Nanoscale. 2015 Jun 7;7(21):9935-44. doi: 10.1039/c4nr07408d. Nanoscale. 2015. PMID: 25970803

3

Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge₂Sb₂Te₅ Thin Film.

Zheng Y, Cheng Y, Huang R, Qi R, Rao F, Ding K, Yin W, Song S, Liu W, Song Z, Feng S. Zheng Y, et al. Among authors: cheng y. Sci Rep. 2017 Jul 19;7(1):5915. doi: 10.1038/s41598-017-06426-2. Sci Rep. 2017. PMID: 28725023 Free PMC article.

4

Scandium doping brings speed improvement in Sb₂Te alloy for phase change random access memory application.

Chen X, Zheng Y, Zhu M, Ren K, Wang Y, Li T, Liu G, Guo T, Wu L, Liu X, Cheng Y, Song Z. Chen X, et al. Among authors: cheng y. Sci Rep. 2018 May 1;8(1):6839. doi: 10.1038/s41598-018-25215-z. Sci Rep. 2018. PMID: 29717216 Free PMC article.

5

Atomic scale insight into the effects of Aluminum doped Sb₂Te for phase change memory application.

Wang Y, Wang T, Zheng Y, Liu G, Li T, Lv S, Song W, Song S, Cheng Y, Ren K, Song Z. Wang Y, et al. Among authors: cheng y. Sci Rep. 2018 Oct 11;8(1):15136. doi: 10.1038/s41598-018-33421-y. Sci Rep. 2018. PMID: 30310138 Free PMC article.

6

A highly CMOS compatible hafnia-based ferroelectric diode.

Luo Q, Cheng Y, Yang J, Cao R, Ma H, Yang Y, Huang R, Wei W, Zheng Y, Gong T, Yu J, Xu X, Yuan P, Li X, Tai L, Yu H, Shang D, Liu Q, Yu B, Ren Q, Lv H, Liu M. Luo Q, et al. Among authors: cheng y. Nat Commun. 2020 Mar 13;11(1):1391. doi: 10.1038/s41467-020-15159-2. Nat Commun. 2020. PMID: 32170177 Free PMC article.

7

Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory.

Cheng Y, Cai D, Zheng Y, Yan S, Wu L, Li C, Song W, Xin T, Lv S, Huang R, Lv H, Song Z, Feng S. Cheng Y, et al. ACS Appl Mater Interfaces. 2020 May 20;12(20):23051-23059. doi: 10.1021/acsami.0c02507. Epub 2020 May 7. ACS Appl Mater Interfaces. 2020. PMID: 32340441

8

The Relationships of Microscopic Evolution to Resistivity Variation of a FIB-Deposited Platinum Interconnector.

Zhong C, Qi R, Zheng Y, Cheng Y, Song W, Huang R. Zhong C, et al. Among authors: cheng y. Micromachines (Basel). 2020 Jun 12;11(6):588. doi: 10.3390/mi11060588. Micromachines (Basel). 2020. PMID: 32545476 Free PMC article.

9

Reversible switching in bicontinuous structure for phase change random access memory application.

Cheng Y, Zheng Y, Song Z. Cheng Y, et al. Nanoscale. 2021 Mar 4;13(8):4678-4684. doi: 10.1039/d0nr09139a. Nanoscale. 2021. PMID: 33620359

10

Atomic Insights into Ti Doping on the Stability Enhancement of Truncated Octahedron LiMn₂O₄ Nanoparticles.

Xu W, Li H, Zheng Y, Lei W, Wang Z, Cheng Y, Qi R, Peng H, Lin H, Yue F, Huang R. Xu W, et al. Among authors: cheng y. Nanomaterials (Basel). 2021 Feb 17;11(2):508. doi: 10.3390/nano11020508. Nanomaterials (Basel). 2021. PMID: 33671361 Free PMC article.

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