A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm.
Li J, Li Y, Zhou N, Wang G, Zhang Q, Du A, Zhang Y, Gao J, Kong Z, Lin H, Xiang J, Li C, Yin X, Li Y, Wang X, Yang H, Ma X, Han J, Zhang J, Hu T, Yang T, Li J, Yin H, Zhu H, Wang W, Radamson HH.
Li J, et al. Among authors: li c, li y.
Materials (Basel). 2020 Feb 7;13(3):771. doi: 10.3390/ma13030771.
Materials (Basel). 2020.
PMID: 32046197
Free PMC article.