Wang G - Search Results

1

First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates.

Li C, Zhu H, Zhang Y, Wang Q, Yin X, Li J, Wang G, Kong Z, Ai X, Xie L, Liu Y, Li Y, Huang W, Yan Z, Xiao Z, Radamson HH, Li J, Wang W. Li C, et al. Among authors: wang g, wang w, wang q. Nano Lett. 2021 Jun 9;21(11):4730-4737. doi: 10.1021/acs.nanolett.1c01033. Epub 2021 May 26. Nano Lett. 2021. PMID: 34038143

2

Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors.

Wang G, Luo J, Qin C, Liang R, Xu Y, Liu J, Li J, Yin H, Yan J, Zhu H, Xu J, Zhao C, Radamson HH, Ye T. Wang G, et al. Nanoscale Res Lett. 2017 Dec;12(1):123. doi: 10.1186/s11671-017-1908-0. Epub 2017 Feb 16. Nanoscale Res Lett. 2017. PMID: 28228008 Free PMC article.

3

pMOSFETs Featuring ALD W Filling Metal Using SiH₄ and B₂H₆ Precursors in 22 nm Node CMOS Technology.

Wang G, Luo J, Liu J, Yang T, Xu Y, Li J, Yin H, Yan J, Zhu H, Zhao C, Ye T, Radamson HH. Wang G, et al. Nanoscale Res Lett. 2017 Dec;12(1):306. doi: 10.1186/s11671-017-2080-2. Epub 2017 Apr 26. Nanoscale Res Lett. 2017. PMID: 28449546 Free PMC article.

4

Miniaturization of CMOS.

Radamson HH, He X, Zhang Q, Liu J, Cui H, Xiang J, Kong Z, Xiong W, Li J, Gao J, Yang H, Gu S, Zhao X, Du Y, Yu J, Wang G. Radamson HH, et al. Among authors: wang g. Micromachines (Basel). 2019 Apr 30;10(5):293. doi: 10.3390/mi10050293. Micromachines (Basel). 2019. PMID: 31052223 Free PMC article. Review.

5

A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm.

Li J, Li Y, Zhou N, Wang G, Zhang Q, Du A, Zhang Y, Gao J, Kong Z, Lin H, Xiang J, Li C, Yin X, Li Y, Wang X, Yang H, Ma X, Han J, Zhang J, Hu T, Yang T, Li J, Yin H, Zhu H, Wang W, Radamson HH. Li J, et al. Among authors: wang x, wang g, wang w. Materials (Basel). 2020 Feb 7;13(3):771. doi: 10.3390/ma13030771. Materials (Basel). 2020. PMID: 32046197 Free PMC article.

6

Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors.

Li J, Li Y, Zhou N, Xiong W, Wang G, Zhang Q, Du A, Gao J, Kong Z, Lin H, Xiang J, Li C, Yin X, Wang X, Yang H, Ma X, Han J, Zhang J, Hu T, Cao Z, Yang T, Li J, Yin H, Zhu H, Luo J, Wang W, Radamson HH. Li J, et al. Among authors: wang x, wang g, wang w. Nanomaterials (Basel). 2020 Apr 20;10(4):793. doi: 10.3390/nano10040793. Nanomaterials (Basel). 2020. PMID: 32326106 Free PMC article.

7

State of the Art and Future Perspectives in Advanced CMOS Technology.

Radamson HH, Zhu H, Wu Z, He X, Lin H, Liu J, Xiang J, Kong Z, Xiong W, Li J, Cui H, Gao J, Yang H, Du Y, Xu B, Li B, Zhao X, Yu J, Dong Y, Wang G. Radamson HH, et al. Among authors: wang g. Nanomaterials (Basel). 2020 Aug 7;10(8):1555. doi: 10.3390/nano10081555. Nanomaterials (Basel). 2020. PMID: 32784801 Free PMC article. Review.

8

Strained Si_0.2Ge_0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/high-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium.

Xie L, Zhu H, Zhang Y, Ai X, Wang G, Li J, Du A, Kong Z, Yin X, Li C, Zhao L, Li Y, Jia K, Li B, Radamson HH. Xie L, et al. Among authors: wang g. Nanomaterials (Basel). 2020 Aug 29;10(9):1715. doi: 10.3390/nano10091715. Nanomaterials (Basel). 2020. PMID: 32872556 Free PMC article.

9

Selective Digital Etching of Silicon-Germanium Using Nitric and Hydrofluoric Acids.

Li C, Zhu H, Zhang Y, Yin X, Jia K, Li J, Wang G, Kong Z, Du A, Yang T, Zhao L, Huang W, Xie L, Li Y, Ai X, Ma S, Radamson HH. Li C, et al. Among authors: wang g. ACS Appl Mater Interfaces. 2020 Oct 21;12(42):48170-48178. doi: 10.1021/acsami.0c14018. Epub 2020 Oct 9. ACS Appl Mater Interfaces. 2020. PMID: 32970945

10

Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon-Germanium Multilayers Structures for Vertical Transistors Application.

Li C, Lin H, Li J, Yin X, Zhang Y, Kong Z, Wang G, Zhu H, Radamson HH. Li C, et al. Among authors: wang g. Nanoscale Res Lett. 2020 Dec 9;15(1):225. doi: 10.1186/s11671-020-03456-0. Nanoscale Res Lett. 2020. PMID: 33296038 Free PMC article.

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