First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates.
Li C, Zhu H, Zhang Y, Wang Q, Yin X, Li J, Wang G, Kong Z, Ai X, Xie L, Liu Y, Li Y, Huang W, Yan Z, Xiao Z, Radamson HH, Li J, Wang W.
Li C, et al. Among authors: xiao z.
Nano Lett. 2021 Jun 9;21(11):4730-4737. doi: 10.1021/acs.nanolett.1c01033. Epub 2021 May 26.
Nano Lett. 2021.
PMID: 34038143