Xie L - Search Results

1

The Effect of Doping on the Digital Etching of Silicon-Selective Silicon-Germanium Using Nitric Acids.

Li Y, Zhu H, Kong Z, Zhang Y, Ai X, Wang G, Wang Q, Liu Z, Lu S, Xie L, Huang W, Liu Y, Li C, Li J, Lin H, Su J, Zeng C, Radamson HH. Li Y, et al. Among authors: xie l. Nanomaterials (Basel). 2021 May 3;11(5):1209. doi: 10.3390/nano11051209. Nanomaterials (Basel). 2021. PMID: 34063569 Free PMC article.

2

Strained Si_0.2Ge_0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/high-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium.

Xie L, Zhu H, Zhang Y, Ai X, Wang G, Li J, Du A, Kong Z, Yin X, Li C, Zhao L, Li Y, Jia K, Li B, Radamson HH. Xie L, et al. Nanomaterials (Basel). 2020 Aug 29;10(9):1715. doi: 10.3390/nano10091715. Nanomaterials (Basel). 2020. PMID: 32872556 Free PMC article.

3

Selective Digital Etching of Silicon-Germanium Using Nitric and Hydrofluoric Acids.

Li C, Zhu H, Zhang Y, Yin X, Jia K, Li J, Wang G, Kong Z, Du A, Yang T, Zhao L, Huang W, Xie L, Li Y, Ai X, Ma S, Radamson HH. Li C, et al. Among authors: xie l. ACS Appl Mater Interfaces. 2020 Oct 21;12(42):48170-48178. doi: 10.1021/acsami.0c14018. Epub 2020 Oct 9. ACS Appl Mater Interfaces. 2020. PMID: 32970945

4

First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates.

Li C, Zhu H, Zhang Y, Wang Q, Yin X, Li J, Wang G, Kong Z, Ai X, Xie L, Liu Y, Li Y, Huang W, Yan Z, Xiao Z, Radamson HH, Li J, Wang W. Li C, et al. Among authors: xie l. Nano Lett. 2021 Jun 9;21(11):4730-4737. doi: 10.1021/acs.nanolett.1c01033. Epub 2021 May 26. Nano Lett. 2021. PMID: 34038143

5

Investigation on Ge_0.8Si_0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice.

Xie L, Zhu H, Zhang Y, Ai X, Li J, Wang G, Du A, Kong Z, Wang Q, Lu S, Li C, Li Y, Huang W, Radamson HH. Xie L, et al. Nanomaterials (Basel). 2021 May 26;11(6):1408. doi: 10.3390/nano11061408. Nanomaterials (Basel). 2021. PMID: 34073548 Free PMC article.

6

Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High-κ Metal Gates with Record High Performance.

Xie L, Zhu H, Zhang Y, Ai X, Li J, Wang G, Liu J, Du A, Yang H, Yin X, Huang W, Li C, Li Y, Wang Q, Lu S, Kong Z, Xiang J, Du Y, Luo J, Li J, Radamson HH, Wang W, Ye T. Xie L, et al. ACS Nano. 2023 Nov 28;17(22):22259-22267. doi: 10.1021/acsnano.3c02518. Epub 2023 Oct 12. ACS Nano. 2023. PMID: 37823534

7

A Theoretical Study of Fe Adsorbed on Pure and Nonmetal (N, F, P, S, Cl)-Doped Ti₃C₂O₂ for Electrocatalytic Nitrogen Reduction.

Luo H, Wang X, Wan C, Xie L, Song M, Qian P. Luo H, et al. Among authors: xie l. Nanomaterials (Basel). 2022 Mar 25;12(7):1081. doi: 10.3390/nano12071081. Nanomaterials (Basel). 2022. PMID: 35407199 Free PMC article.

8

Mechanical Properties of Vacancy Tuned Carbon Honeycomb.

Xie L, An H, He C, Qin Q, Peng Q. Xie L, et al. Nanomaterials (Basel). 2019 Jan 27;9(2):156. doi: 10.3390/nano9020156. Nanomaterials (Basel). 2019. PMID: 30691195 Free PMC article.

9

The Temperature-Sensitive Anisotropic Negative Poisson's Ratio of Carbon Honeycomb.

Wang W, He C, Xie L, Peng Q. Wang W, et al. Among authors: xie l. Nanomaterials (Basel). 2019 Mar 28;9(4):487. doi: 10.3390/nano9040487. Nanomaterials (Basel). 2019. PMID: 30925696 Free PMC article.

10

Molecular Dynamics Simulation on Mechanical and Piezoelectric Properties of Boron Nitride Honeycomb Structures.

Xie L, Wang T, He C, Sun Z, Peng Q. Xie L, et al. Nanomaterials (Basel). 2019 Jul 21;9(7):1044. doi: 10.3390/nano9071044. Nanomaterials (Basel). 2019. PMID: 31330928 Free PMC article.

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