Liu Q - Search Results

1

Tactile Near-Sensor Analogue Computing for Ultrafast Responsive Artificial Skin.

Wang M, Tu J, Huang Z, Wang T, Liu Z, Zhang F, Li W, He K, Pan L, Zhang X, Feng X, Liu Q, Liu M, Chen X. Wang M, et al. Among authors: liu z, liu m, liu q. Adv Mater. 2022 Aug;34(34):e2201962. doi: 10.1002/adma.202201962. Epub 2022 Jul 21. Adv Mater. 2022. PMID: 35816720

2

Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.

Yang YC, Pan F, Liu Q, Liu M, Zeng F. Yang YC, et al. Among authors: liu m, liu q. Nano Lett. 2009 Apr;9(4):1636-43. doi: 10.1021/nl900006g. Nano Lett. 2009. PMID: 19271714

3

Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM.

Liu Q, Sun J, Lv H, Long S, Yin K, Wan N, Li Y, Sun L, Liu M. Liu Q, et al. Among authors: liu m. Adv Mater. 2012 Apr 10;24(14):1844-9. doi: 10.1002/adma.201104104. Epub 2012 Mar 7. Adv Mater. 2012. PMID: 22407902

4

Response to "comment on real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM".

Liu Q, Jun S, Lv H, Long S, Li L, Yin K, Wan N, Li Y, Sun L, Liu M. Liu Q, et al. Among authors: liu m. Adv Mater. 2013 Jan 11;25(2):165-7. doi: 10.1002/adma.201203771. Epub 2012 Oct 19. Adv Mater. 2013. PMID: 23086910 No abstract available.

5

Bipolar one diode-one resistor integration for high-density resistive memory applications.

Li Y, Lv H, Liu Q, Long S, Wang M, Xie H, Zhang K, Huo Z, Liu M. Li Y, et al. Among authors: liu m, liu q. Nanoscale. 2013 Jun 7;5(11):4785-9. doi: 10.1039/c3nr33370a. Epub 2013 Apr 23. Nanoscale. 2013. PMID: 23612603

6

Thermoelectric Seebeck effect in oxide-based resistive switching memory.

Wang M, Bi C, Li L, Long S, Liu Q, Lv H, Lu N, Sun P, Liu M. Wang M, et al. Among authors: liu m, liu q. Nat Commun. 2014 Aug 20;5:4598. doi: 10.1038/ncomms5598. Nat Commun. 2014. PMID: 25141267 Free PMC article.

7

Impact of program/erase operation on the performances of oxide-based resistive switching memory.

Wang G, Long S, Yu Z, Zhang M, Li Y, Xu D, Lv H, Liu Q, Yan X, Wang M, Xu X, Liu H, Yang B, Liu M. Wang G, et al. Among authors: liu h, liu m, liu q. Nanoscale Res Lett. 2015 Feb 5;10:39. doi: 10.1186/s11671-014-0721-2. eCollection 2015. Nanoscale Res Lett. 2015. PMID: 25852336 Free PMC article.

8

Investigation of LRS dependence on the retention of HRS in CBRAM.

Xu X, Lv H, Liu H, Luo Q, Gong T, Wang M, Wang G, Zhang M, Li Y, Liu Q, Long S, Liu M. Xu X, et al. Among authors: liu h, liu m, liu q. Nanoscale Res Lett. 2015 Feb 11;10:61. doi: 10.1186/s11671-015-0771-0. eCollection 2015. Nanoscale Res Lett. 2015. PMID: 25852358 Free PMC article.

9

Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory.

Liu S, Lu N, Zhao X, Xu H, Banerjee W, Lv H, Long S, Li Q, Liu Q, Liu M. Liu S, et al. Among authors: liu m, liu q. Adv Mater. 2016 Dec;28(48):10623-10629. doi: 10.1002/adma.201603293. Epub 2016 Oct 17. Adv Mater. 2016. PMID: 27748526

10

Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials.

Li Y, Long S, Liu Q, Lv H, Liu M. Li Y, et al. Among authors: liu m, liu q. Small. 2017 Sep;13(35). doi: 10.1002/smll.201604306. Epub 2017 Apr 18. Small. 2017. PMID: 28417548 Review.

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