Gluschke JG - Search Results

1

Multi-Redox Responsive Behavior in a Mixed-Valence Semiconducting Framework Based on Bis-[1,2,5]-thiadiazolo-tetracyanoquinodimethane.

Murase R, Hudson TA, Aldershof TS, Nguyen KV, Gluschke JG, Kenny EP, Zhou X, Wang T, van Koeverden MP, Powell BJ, Micolich AP, Abrahams BF, D'Alessandro DM. Murase R, et al. Among authors: gluschke jg. J Am Chem Soc. 2022 Jul 27;144(29):13242-13253. doi: 10.1021/jacs.2c03794. Epub 2022 Jul 13. J Am Chem Soc. 2022. PMID: 35830247

2

InAs Nanowire Transistors with Multiple, Independent Wrap-Gate Segments.

Burke AM, Carrad DJ, Gluschke JG, Storm K, Fahlvik Svensson S, Linke H, Samuelson L, Micolich AP. Burke AM, et al. Among authors: gluschke jg. Nano Lett. 2015 May 13;15(5):2836-43. doi: 10.1021/nl5043243. Epub 2015 Apr 21. Nano Lett. 2015. PMID: 25879492

3

Towards low-dimensional hole systems in Be-doped GaAs nanowires.

Ullah AR, Gluschke JG, Krogstrup P, Sørensen CB, Nygård J, Micolich AP. Ullah AR, et al. Among authors: gluschke jg. Nanotechnology. 2017 Mar 1;28(13):134005. doi: 10.1088/1361-6528/aa6067. Epub 2017 Mar 3. Nanotechnology. 2017. PMID: 28256451

4

Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistors.

Gluschke JG, Seidl J, Lyttleton RW, Carrad DJ, Cochrane JW, Lehmann S, Samuelson L, Micolich AP. Gluschke JG, et al. Nano Lett. 2018 Jul 11;18(7):4431-4439. doi: 10.1021/acs.nanolett.8b01519. Epub 2018 Jun 27. Nano Lett. 2018. PMID: 29923725

5

p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating.

Ullah AR, Meyer F, Gluschke JG, Naureen S, Caroff P, Krogstrup P, Nygård J, Micolich AP. Ullah AR, et al. Among authors: gluschke jg. Nano Lett. 2018 Sep 12;18(9):5673-5680. doi: 10.1021/acs.nanolett.8b02249. Epub 2018 Aug 24. Nano Lett. 2018. PMID: 30134098

6

Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors.

Gluschke JG, Seidl J, Burke AM, Lyttleton RW, Carrad DJ, Ullah AR, Fahlvik S, Lehmann S, Linke H, Micolich AP. Gluschke JG, et al. Nanotechnology. 2019 Feb 8;30(6):064001. doi: 10.1088/1361-6528/aaf1e5. Nanotechnology. 2019. PMID: 30523834

7

Regaining a Spatial Dimension: Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area Epitaxy.

Seidl J, Gluschke JG, Yuan X, Naureen S, Shahid N, Tan HH, Jagadish C, Micolich AP, Caroff P. Seidl J, et al. Among authors: gluschke jg. Nano Lett. 2019 Jul 10;19(7):4666-4677. doi: 10.1021/acs.nanolett.9b01703. Epub 2019 Jun 26. Nano Lett. 2019. PMID: 31241966

8

A parylene coating system specifically designed for producing ultra-thin films for nanoscale device applications.

Gluschke JG, Richter F, Micolich AP. Gluschke JG, et al. Rev Sci Instrum. 2019 Aug;90(8):083901. doi: 10.1063/1.5099293. Rev Sci Instrum. 2019. PMID: 31472654

9

Impact of invasive metal probes on Hall measurements in semiconductor nanostructures.

Gluschke JG, Seidl J, Tan HH, Jagadish C, Caroff P, Micolich AP. Gluschke JG, et al. Nanoscale. 2020 Oct 15;12(39):20317-20325. doi: 10.1039/d0nr04402d. Nanoscale. 2020. PMID: 33006359

10

Postgrowth Shaping and Transport Anisotropy in Two-Dimensional InAs Nanofins.

Seidl J, Gluschke JG, Yuan X, Tan HH, Jagadish C, Caroff P, Micolich AP. Seidl J, et al. Among authors: gluschke jg. ACS Nano. 2021 Apr 27;15(4):7226-7236. doi: 10.1021/acsnano.1c00483. Epub 2021 Apr 7. ACS Nano. 2021. PMID: 33825436

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