Cheng Y - Search Results

1

Atomic Layer Deposition of Sb₂ Te₃ /GeTe Superlattice Film and Its Melt-Quenching-Free Phase-Transition Mechanism for Phase-Change Memory.

Yoo C, Jeon JW, Yoon S, Cheng Y, Han G, Choi W, Park B, Jeon G, Jeon S, Kim W, Zheng Y, Lee J, Ahn J, Cho S, Clendenning SB, Karpov IV, Lee YK, Choi JH, Hwang CS. Yoo C, et al. Among authors: cheng y. Adv Mater. 2022 Dec;34(50):e2207143. doi: 10.1002/adma.202207143. Epub 2022 Nov 3. Adv Mater. 2022. PMID: 36271720

2

Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge₂Sb₂Te₅ Thin Film.

Zheng Y, Cheng Y, Huang R, Qi R, Rao F, Ding K, Yin W, Song S, Liu W, Song Z, Feng S. Zheng Y, et al. Among authors: cheng y. Sci Rep. 2017 Jul 19;7(1):5915. doi: 10.1038/s41598-017-06426-2. Sci Rep. 2017. PMID: 28725023 Free PMC article.

3

Scandium doping brings speed improvement in Sb₂Te alloy for phase change random access memory application.

Chen X, Zheng Y, Zhu M, Ren K, Wang Y, Li T, Liu G, Guo T, Wu L, Liu X, Cheng Y, Song Z. Chen X, et al. Among authors: cheng y. Sci Rep. 2018 May 1;8(1):6839. doi: 10.1038/s41598-018-25215-z. Sci Rep. 2018. PMID: 29717216 Free PMC article.

4

Atomic scale insight into the effects of Aluminum doped Sb₂Te for phase change memory application.

Wang Y, Wang T, Zheng Y, Liu G, Li T, Lv S, Song W, Song S, Cheng Y, Ren K, Song Z. Wang Y, et al. Among authors: cheng y. Sci Rep. 2018 Oct 11;8(1):15136. doi: 10.1038/s41598-018-33421-y. Sci Rep. 2018. PMID: 30310138 Free PMC article.

5

Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory.

Cheng Y, Cai D, Zheng Y, Yan S, Wu L, Li C, Song W, Xin T, Lv S, Huang R, Lv H, Song Z, Feng S. Cheng Y, et al. ACS Appl Mater Interfaces. 2020 May 20;12(20):23051-23059. doi: 10.1021/acsami.0c02507. Epub 2020 May 7. ACS Appl Mater Interfaces. 2020. PMID: 32340441

6

The Relationships of Microscopic Evolution to Resistivity Variation of a FIB-Deposited Platinum Interconnector.

Zhong C, Qi R, Zheng Y, Cheng Y, Song W, Huang R. Zhong C, et al. Among authors: cheng y. Micromachines (Basel). 2020 Jun 12;11(6):588. doi: 10.3390/mi11060588. Micromachines (Basel). 2020. PMID: 32545476 Free PMC article.

7

Reversible switching in bicontinuous structure for phase change random access memory application.

Cheng Y, Zheng Y, Song Z. Cheng Y, et al. Nanoscale. 2021 Mar 4;13(8):4678-4684. doi: 10.1039/d0nr09139a. Nanoscale. 2021. PMID: 33620359

8

Atomic Insights into Ti Doping on the Stability Enhancement of Truncated Octahedron LiMn₂O₄ Nanoparticles.

Xu W, Li H, Zheng Y, Lei W, Wang Z, Cheng Y, Qi R, Peng H, Lin H, Yue F, Huang R. Xu W, et al. Among authors: cheng y. Nanomaterials (Basel). 2021 Feb 17;11(2):508. doi: 10.3390/nano11020508. Nanomaterials (Basel). 2021. PMID: 33671361 Free PMC article.

9

The formation of TiO₂/VO₂ multilayer structure via directional cationic diffusion.

Zheng Y, Chen Z, Lu H, Cheng Y, Chen X, He Y, Zhang Z. Zheng Y, et al. Among authors: cheng y. Nanoscale. 2021 Apr 30;13(16):7783-7791. doi: 10.1039/d1nr00290b. Nanoscale. 2021. PMID: 33871530

10

Understanding the Effect of Al Doping on the Electrochemical Performance Improvement of the LiMn₂O₄ Cathode Material.

Xu W, Zheng Y, Cheng Y, Qi R, Peng H, Lin H, Huang R. Xu W, et al. Among authors: cheng y. ACS Appl Mater Interfaces. 2021 Sep 29;13(38):45446-45454. doi: 10.1021/acsami.1c11315. Epub 2021 Sep 17. ACS Appl Mater Interfaces. 2021. PMID: 34533922

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