High-density vertical sidewall MoS2 transistors through T-shape vertical lamination.
Tao Q, Wu R, Zou X, Chen Y, Li W, Lu Z, Ma L, Kong L, Lu D, Yang X, Song W, Li W, Liu L, Ding S, Liu X, Duan X, Liao L, Liu Y.
Tao Q, et al. Among authors: zou x.
Nat Commun. 2024 Jul 10;15(1):5774. doi: 10.1038/s41467-024-50185-4.
Nat Commun. 2024.
PMID: 38982079
Free PMC article.