Inoue K - Search Results

1

High Thermal Stability and Low Thermal Resistance of Large Area GaN/3C-SiC/Diamond Junctions for Practical Device Processes.

Kagawa R, Cheng Z, Kawamura K, Ohno Y, Moriyama C, Sakaida Y, Ouchi S, Uratani H, Inoue K, Nagai Y, Shigekawa N, Liang J. Kagawa R, et al. Among authors: inoue k. Small. 2024 Mar;20(13):e2305574. doi: 10.1002/smll.202305574. Epub 2023 Nov 14. Small. 2024. PMID: 37964293

2

Evaluation of spatial and temporal resolution on in situ annealing aberration-corrected transmission electron microscopy with proportional-integral-differential controller.

Shimada Y, Yoshida K, Inoue K, Shiraishi T, Kiguchi T, Nagai Y, Konno TJ. Shimada Y, et al. Among authors: inoue k. Microscopy (Oxf). 2019 Jun 1;68(3):271-278. doi: 10.1093/jmicro/dfz010. Microscopy (Oxf). 2019. PMID: 30843044

3

Behavior of phosphorous and contaminants from molecular doping combined with a conventional spike annealing method.

Shimizu Y, Takamizawa H, Inoue K, Yano F, Nagai Y, Lamagna L, Mazzeo G, Perego M, Prati E. Shimizu Y, et al. Among authors: inoue k. Nanoscale. 2014 Jan 21;6(2):706-10. doi: 10.1039/c3nr03605g. Nanoscale. 2014. PMID: 24284778

4

Correlative atom probe tomography and scanning transmission electron microscopy reveal growth sequence of LPSO phase in Mg alloy containing Al and Gd.

Inoue K, Yoshida K, Nagai Y, Kishida K, Inui H. Inoue K, et al. Sci Rep. 2021 Feb 4;11(1):3073. doi: 10.1038/s41598-021-82705-3. Sci Rep. 2021. PMID: 33542385 Free PMC article.

5

Boron distributions in individual core-shell Ge/Si and Si/Ge heterostructured nanowires.

Han B, Shimizu Y, Wipakorn J, Nishibe K, Tu Y, Inoue K, Fukata N, Nagai Y. Han B, et al. Among authors: inoue k. Nanoscale. 2016 Dec 1;8(47):19811-19815. doi: 10.1039/c6nr04384d. Nanoscale. 2016. PMID: 27874128

6

Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations.

Ohno Y, Inoue K, Fujiwara K, Kutsukake K, Deura M, Yonenaga I, Ebisawa N, Shimizu Y, Inoue K, Nagai Y, Yoshida H, Takeda S, Tanaka S, Kohyama M. Ohno Y, et al. Among authors: inoue k. J Microsc. 2017 Dec;268(3):230-238. doi: 10.1111/jmi.12602. Epub 2017 Jul 7. J Microsc. 2017. PMID: 28686305

7

Elemental Distribution in Multilayer Systems by Laser-Assisted Atom Probe Tomography with Various Analysis Directions.

Kubota M, Takamizawa H, Shimizu Y, Nozawa Y, Ebisawa N, Toyama T, Ishida Y, Yanagiuchi K, Inoue K, Nagai Y. Kubota M, et al. Among authors: inoue k. Microsc Microanal. 2015 Dec;21(6):1373-1378. doi: 10.1017/S1431927615015160. Epub 2015 Sep 16. Microsc Microanal. 2015. PMID: 26373477

8

Dopant distributions in n-MOSFET structure observed by atom probe tomography.

Inoue K, Yano F, Nishida A, Takamizawa H, Tsunomura T, Nagai Y, Hasegawa M. Inoue K, et al. Ultramicroscopy. 2009 Nov;109(12):1479-84. doi: 10.1016/j.ultramic.2009.08.002. Epub 2009 Aug 27. Ultramicroscopy. 2009. PMID: 19775815

9

Weak-beam scanning transmission electron microscopy for quantitative dislocation density measurement in steels.

Yoshida K, Shimodaira M, Toyama T, Shimizu Y, Inoue K, Yoshiie T, Milan KJ, Gerard R, Nagai Y. Yoshida K, et al. Among authors: inoue k. Microscopy (Oxf). 2017 Apr 1;66(2):120-130. doi: 10.1093/jmicro/dfw111. Microscopy (Oxf). 2017. PMID: 28100661

10

1.54 μm photoluminescence from Er:O_x centers at extremely low concentration in silicon at 300 K.

Celebrano M, Ghirardini L, Finazzi M, Shimizu Y, Tu Y, Inoue K, Nagai Y, Shinada T, Chiba Y, Abdelghafar A, Yano M, Tanii T, Prati E. Celebrano M, et al. Among authors: inoue k. Opt Lett. 2017 Sep 1;42(17):3311-3314. doi: 10.1364/OL.42.003311. Opt Lett. 2017. PMID: 28957091

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