Elliman RG - Search Results

1

Biorealistic Neuronal Temperature-Sensitive Dynamics within Threshold Switching Memristors: Toward Neuromorphic Thermosensation.

Bonagiri A, Das SK, Marquez CV, Rúa A, Puyoo E, Nath SK, Albertini D, Baboux N, Uenuma M, Elliman RG, Nandi SK. Bonagiri A, et al. Among authors: elliman rg. ACS Appl Mater Interfaces. 2024 Jun 19;16(24):31283-31293. doi: 10.1021/acsami.4c03803. Epub 2024 Jun 5. ACS Appl Mater Interfaces. 2024. PMID: 38836546

2

Electric Field- and Current-Induced Electroforming Modes in NbO_x.

Nandi SK, Nath SK, El-Helou AE, Li S, Ratcliff T, Uenuma M, Raad PE, Elliman RG. Nandi SK, et al. Among authors: elliman rg. ACS Appl Mater Interfaces. 2020 Feb 19;12(7):8422-8428. doi: 10.1021/acsami.9b20252. Epub 2020 Feb 7. ACS Appl Mater Interfaces. 2020. PMID: 31989818

3

Engineering the Threshold Switching Response of Nb₂O₅-Based Memristors by Ti Doping.

Nath SK, Nandi SK, Ratcliff T, Elliman RG. Nath SK, et al. Among authors: elliman rg. ACS Appl Mater Interfaces. 2021 Jan 20;13(2):2845-2852. doi: 10.1021/acsami.0c19544. Epub 2021 Jan 6. ACS Appl Mater Interfaces. 2021. PMID: 33406833

4

Thermal Conductivity of Amorphous NbO_x Thin Films and Its Effect on Volatile Memristive Switching.

Nandi SK, Das SK, Cui Y, El Helou A, Nath SK, Ratcliff T, Raad P, Elliman RG. Nandi SK, et al. Among authors: elliman rg. ACS Appl Mater Interfaces. 2022 May 11;14(18):21270-21277. doi: 10.1021/acsami.2c04618. Epub 2022 Apr 29. ACS Appl Mater Interfaces. 2022. PMID: 35485924

5

High Spatial Resolution Thermal Mapping of Volatile Switching in NbO_x-Based Memristor Using In Situ Scanning Thermal Microscopy.

Nandi SK, Puyoo E, Nath SK, Albertini D, Baboux N, Das SK, Ratcliff T, Elliman RG. Nandi SK, et al. Among authors: elliman rg. ACS Appl Mater Interfaces. 2022 Jun 29;14(25):29025-29031. doi: 10.1021/acsami.2c06870. Epub 2022 Jun 14. ACS Appl Mater Interfaces. 2022. PMID: 35700145

6

Effect of Interdiffusion and Crystallization on Threshold Switching Characteristics of Nb/Nb₂O₅/Pt Memristors.

Nandi SK, Nath SK, Das SK, Murdoch BJ, Ratcliff T, McCulloch DG, Elliman RG. Nandi SK, et al. Among authors: elliman rg. ACS Appl Mater Interfaces. 2023 Dec 20;15(50):58613-58622. doi: 10.1021/acsami.3c14431. Epub 2023 Dec 5. ACS Appl Mater Interfaces. 2023. PMID: 38051757

7

Anatomy of filamentary threshold switching in amorphous niobium oxide.

Li S, Liu X, Nandi SK, Elliman RG. Li S, et al. Among authors: elliman rg. Nanotechnology. 2018 Sep 14;29(37):375705. doi: 10.1088/1361-6528/aacee4. Epub 2018 Jun 25. Nanotechnology. 2018. PMID: 29939155

8

Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbO _x.

Nath SK, Nandi SK, Li S, Elliman RG. Nath SK, et al. Among authors: elliman rg. Nanotechnology. 2020 Mar 20;31(23):235701. doi: 10.1088/1361-6528/ab7889. Epub 2020 Feb 20. Nanotechnology. 2020. PMID: 32079000

9

Physical Origin of Negative Differential Resistance in V₃ O₅ and Its Application as a Solid-State Oscillator.

Das SK, Nandi SK, Marquez CV, Rúa A, Uenuma M, Puyoo E, Nath SK, Albertini D, Baboux N, Lu T, Liu Y, Haeger T, Heiderhoff R, Riedl T, Ratcliff T, Elliman RG. Das SK, et al. Among authors: elliman rg. Adv Mater. 2023 Feb;35(8):e2208477. doi: 10.1002/adma.202208477. Epub 2022 Dec 30. Adv Mater. 2023. PMID: 36461165

10

Thermal transport in metal-NbO_x-metal cross-point devices and its effect on threshold switching characteristics.

Nath SK, Nandi SK, Das SK, Liang Y, Elliman RG. Nath SK, et al. Among authors: elliman rg. Nanoscale. 2023 Apr 27;15(16):7559-7565. doi: 10.1039/d3nr00173c. Nanoscale. 2023. PMID: 37038892

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