Heo YW - Search Results

1

Tetraoctylammonium Bromide Interlayer between NiLiO_x and Perovskite for Light-Emitting Diodes.

Vo VK, Bae SH, Dang THT, Phung DH, Kim J, Lee S, Lee N, Lim HJ, Kim KH, Lee JH, Heo YW. Vo VK, et al. Among authors: heo yw. ACS Appl Mater Interfaces. 2024 Nov 20;16(46):64210-64221. doi: 10.1021/acsami.4c13287. Epub 2024 Nov 12. ACS Appl Mater Interfaces. 2024. PMID: 39530385

2

Growth and NO₂-Sensing Properties of Biaxial p-SnO/n-ZnO Heterostructured Nanowires.

Hung PT, Hoat PD, Hien VX, Lee HY, Lee S, Lee JH, Kim JJ, Heo YW. Hung PT, et al. Among authors: heo yw. ACS Appl Mater Interfaces. 2020 Jul 29;12(30):34274-34282. doi: 10.1021/acsami.0c04974. Epub 2020 Jul 17. ACS Appl Mater Interfaces. 2020. PMID: 32639143

3

Low temperature growth and optical properties of ZnO nanowires using an aqueous solution method.

Chu MH, Lee JH, Kim JJ, Kim KW, Norton DP, Heo YW. Chu MH, et al. Among authors: heo yw. J Nanosci Nanotechnol. 2012 Feb;12(2):1415-20. doi: 10.1166/jnn.2012.4653. J Nanosci Nanotechnol. 2012. PMID: 22629969

4

Sn Spheres Embedded in a SiO2 Matrix: Synthesis and Potential Application As Self-Destructing Materials.

Hien VX, Heo YW. Hien VX, et al. Among authors: heo yw. ACS Appl Mater Interfaces. 2016 Aug 24;8(33):21787-97. doi: 10.1021/acsami.6b05961. Epub 2016 Aug 9. ACS Appl Mater Interfaces. 2016. PMID: 27463945

5

Effects of temperature, target/substrate distance, and background pressure on growth of ZnO nanorods by pulsed laser deposition.

Kim SY, Lee JH, Kim JJ, Heo YW. Kim SY, et al. Among authors: heo yw. J Nanosci Nanotechnol. 2014 Dec;14(12):9020-4. doi: 10.1166/jnn.2014.10062. J Nanosci Nanotechnol. 2014. PMID: 25971002

6

Transmission electron microscopy study of 3.2 YSZ single crystals manufactured by the skull melting method.

Kim H, Moon JY, Lee JH, Lee JK, Heo YW, Kim JJ, Lee HS. Kim H, et al. Among authors: heo yw. J Nanosci Nanotechnol. 2014 Oct;14(10):7961-4. doi: 10.1166/jnn.2014.9476. J Nanosci Nanotechnol. 2014. PMID: 25942902

7

Room-Temperature-Processed Amorphous Sn-In-O Electron Transport Layer for Perovskite Solar Cells.

Baek S, Han JW, Vidyasagar D, Cho H, Ha HH, Kim DH, Heo YW, Lee S. Baek S, et al. Among authors: heo yw. Materials (Basel). 2019 Dec 19;13(1):32. doi: 10.3390/ma13010032. Materials (Basel). 2019. PMID: 31861710 Free PMC article.

8

High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide.

Noviyana I, Lestari AD, Putri M, Won MS, Bae JS, Heo YW, Lee HY. Noviyana I, et al. Among authors: heo yw. Materials (Basel). 2017 Jun 26;10(7):702. doi: 10.3390/ma10070702. Materials (Basel). 2017. PMID: 28773058 Free PMC article.

9

Influence of Oxygen Partial Pressure on Radio Frequency Magnetron Sputtered Amorphous InZnSnO Thin Film Transistors.

Lestari AD, Putri M, Heo YW, Lee HY. Lestari AD, et al. Among authors: heo yw. J Nanosci Nanotechnol. 2020 Jan 1;20(1):252-256. doi: 10.1166/jnn.2020.17222. J Nanosci Nanotechnol. 2020. PMID: 31383163

10

Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y₂O₃ Gate Dielectric.

Jauhari IM, Bak YG, Noviyana I, Putri MA, Lee JA, Heo YW, Lee HY. Jauhari IM, et al. Among authors: heo yw. J Nanosci Nanotechnol. 2021 Mar 1;21(3):1748-1753. doi: 10.1166/jnn.2021.18924. J Nanosci Nanotechnol. 2021. PMID: 33404442

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